Fully solution-processed carbon nanotubes thin film transistors and PMOS inverters on glass substrate

Bias-stress-stable solution-processed oxide thin film transistors.

We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By p...

Review of solution-processed oxide thin-film transistors

Solution processed high performance pentacene thin-film transistors.

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).

Short-channel transistors constructed with solution-processed carbon nanotubes.

We develop short-channel transistors using solution-processed single-walled carbon nanotubes (SWNTs) to evaluate the feasibility of those SWNTs for high-performance applications. Our results show that even though the intrinsic field-effect mobility is lower than the mobility of CVD nanotubes, the electrical contact between the nanotube and metal electrodes is not significantly affected. It is t...

Complementary Organic Thin-Film Transistors on Glass

Organic thin-film transistors (OTFT) present a new approach to building electronics that can mechanically flex, span large areas, and integrate with polymeric materials. Potential applications include flexible displays, biochemical sensors, and artificial skin. In many applications, OTFTs act as an interface between the physical environment and the digital processors. Yet, a conspicuous absence...